To provide a semiconductor device including a plurality of resistance-change memory cells, which can prevent excessive peak current when a potential of a commonly used source line is changed in a case where the source line is commonly used to reduce a layout size.

The semiconductor device has: a plurality of bit lines respectively connected to one ends of the plurality of resistance-change memory cells; a common source line commonly connected to the other ends of the plurality of resistance-change memory cells; and a source line driver controlling the potential of the common source line. The source line driver variably controls current supplied to the common source line.