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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013191636
Kind Code:
A
Abstract:

To provide a semiconductor device, along with its manufacturing method, containing a nonvolatile memory capable of continuously reading for many years after rewriting many times at a high temperature.

An EEPROM memory includes a matrix of memory cells constituted of row and column. Each of the memory cells includes a memory transistor containing a floating gate and a control gate, and, in series to the same, a selection transistor having a selector gate. The control gates of a plurality of memory transistors are connected to control gate lines respectively, and the selector gate of the selection transistor is connected to a word line 13 respectively. The plurality of selection transistors are connected to each other by a common source line. Since two power sources, or Vppb and 2 V, are added, a potential difference |VGB| between gate and Bulk can be controlled to be 2 V or less.


Inventors:
Kusuhara, Masayuki
Ishikawa, Akira
Application Number:
JP2012000054966
Publication Date:
September 26, 2013
Filing Date:
March 12, 2012
Export Citation:
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Assignee:
ASAHI KASEI ELECTRONICS CO LTD
International Classes:
H01L21/8247; G11C16/04; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
森 哲也
小西 恵
田中 秀▲てつ▼