To provide a semiconductor device which can reduce capacitance between gate-drain and reduce a time change rate di/dt of a collector current in an on-state.

A semiconductor device comprises: projected semiconductor regions 2 provided on a first principal surface of a semiconductor substrate which is to become an n^- type drift layer 1; p type base layers 3 and n⁺⁺ type emitter layers 4 which are provided inside the projected semiconductor regions 2, in which the p type base layers 3 are sandwiched by the n⁺⁺ type emitter layers 4 and the n^- type drift layer 1 at lateral faces of the projected semiconductor regions 2; a gate electrode 7 is opposite to a part of the p type base layer 3, which is sandwiched by the n⁺⁺ type emitter layers 4 and the n^- type drift layer 1 via a gate insulation film 6 between the neighboring projected semiconductor regions 2; a dummy gate electrode 9 which is provided at a distance from the gate electrode 7 across the projected semiconductor regions 2 and which is opposite to the n^- type drift layer 1 via a dummy gate insulation film 8; and an emitter electrode 10 to which the dummy gate electrode 9 is connected.