Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014003196
Kind Code:
A
Abstract:
To enable easily manufacturing a single-electron transfer device using an impurity of a semiconductor.
A semiconductor device includes one impurity atom 109 introduced into a channel region 104. The channel region 104 has a distance of 4 nm or less between a first gate insulating layer 106 and a second gate insulating layer 108. The impurity atom 109 is composed of any of boron, aluminum, phosphorus, and arsenic. The impurity atom 109 introduced into the channel region 104 forms an impurity level in the channel region 104 and functions as a single-electron island.
Inventors:
ONO YUKINORI
FUJIWARA SATOSHI
SHINADA TAKAHIRO
FUJIWARA SATOSHI
SHINADA TAKAHIRO
Application Number:
JP2012138436A
Publication Date:
January 09, 2014
Filing Date:
June 20, 2012
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
UNIV WASEDA
UNIV WASEDA
International Classes:
H01L29/786; H01L29/06; H01L29/66
Domestic Patent References:
| JP2006332097A | 2006-12-07 | |||
| JP2012009496A | 2012-01-12 | |||
| JP2009545187A | 2009-12-17 |
Other References:
JPN6015043353; Ｋ． Ｓｈｉｎｏｚｕｋａ: 'Ｓｈａｌｌｏｗ-ｄｅｅｐ ｉｎｓｔａｂｉｌｉｔｙ ｏｆ ａ ｈｙｄｒｏｇｅｎｉｃ ｉｍｐｕｒｉｔｙ ｉｎ ｑｕａｎｔｕｍ ｗｅｌｌｓ' Ｍａｔｅｒｉａｌｓ Ｓｉｅｎｃｅ Ｆｏｒｕｍ Ｖｏｌ．１１７-１１８, 19930226, ｐｐ．９９-１０４, Ｔｒａｎｓ Ｔｅｃｈ Ｐｕｂｌｉｃａｔｉｏｎｓ
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Yuzo Koike
Shigeki Yamakawa
Yuzo Koike