To provide a resistor element manufactured using an oxide semiconductor layer with its electrical characteristics controlled, a logic circuit using a thin film transistor, and a semiconductor device using the logic circuit.
A silicon nitride layer 910 formed by a plasma CVD method using gas including a hydrogen compound such as silane (SiH4) or ammonia (NH3) is provided on and in direct contact with an oxide semiconductor layer 905 used for a resistor element 354. An oxide semiconductor layer 906 used for a thin film transistor 355 is provided with a silicon nitride layer 910 with a silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, hydrogen is introduced in the oxide semiconductor layer 905 at higher concentration than in the oxide semiconductor layer 906. As a result, the resistance value of the oxide semiconductor layer 905 used for the resistor element 354 is lower than the resistance value of the oxide semiconductor layer 906 used for the thin film transistor 355.
SAKATA JUNICHIRO
MARUYAMA YOSHIKI
IMOTO YUKI
ASANO YUJI
HIZUKA JUNICHI
| JPH07226373A | 1995-08-22 | |||
| JP2008217778A | 2008-09-18 | |||
| JP2007194594A | 2007-08-02 | |||
| JP2008294136A | 2008-12-04 |