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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014067760
Kind Code:
A
Abstract:

To reduce a parasitic inductance.

A semiconductor device according to the embodiment includes a substrate, a first circuit part, and a second circuit part. The first circuit part includes a first switching element, a first diode, a second switching element, and a second diode. The second circuit part includes a third switching element, a third diode, a fourth switching element, and a fourth diode. The first switching element is juxtaposed with any one of the second switching element and the third switching element in a first direction along the substrate, and juxtaposed with the fourth switching element in a second direction along the substrate and crossing the first direction. The other of the second switching element and the third switching element, is juxtaposed with the fourth switching element in the first direction, and juxtaposed with any one of the second switching element and the third switching element in the second direction.


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Inventors:
TAKAO KAZUTO
KONO HIROSHI
KIKUCHI TAKUO
Application Number:
JP2012210188A
Publication Date:
April 17, 2014
Filing Date:
September 24, 2012
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L25/18; H01L25/07; H02M1/00; H02M7/48
Domestic Patent References:
JP2007234690A2007-09-13
JP2005005593A2005-01-06
JPH11155286A1999-06-08
JPH06225545A1994-08-12
JP2007151286A2007-06-14
JP2004022960A2004-01-22
JP2009044891A2009-02-26
Foreign References:
WO2012073570A12012-06-07
WO2010131679A12010-11-18
Attorney, Agent or Firm:
Masahiko Hinataji



 
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