Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014093486
Kind Code:
A
Abstract:

To provide a semiconductor device that is able to restrict partial current concentration without using special tester in screening at high current density, and to provide an inspection method therefor.

A semiconductor device comprises: a semiconductor substrate (12) provided with a plurality of gate electrodes (26) arranged parallel to one another in a first direction and having a plurality of transistor cells (44) as cells (42) defined by adjacent gate electrodes; a gate wire (38) and a gate pad (36) that are formed on a first principal surface (12a) of a semiconductor substrate; a first pad (32) formed on the first principal surface and common to the plurality of transistor cells; and a second pad (40) formed on the first principal surface or a second principal surface (12b) and common to the transistor cells. A plurality of gate pads are provided, and gate electrodes are electrically separated into a plurality of types by the gate wires. Additionally, a plurality types of transistor cell are provided by combinations of defined gate electrodes.


Inventors:
Okura, Yasutsugu
Application Number:
JP2012000244712
Publication Date:
May 19, 2014
Filing Date:
November 06, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
DENSO CORP
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/739
Domestic Patent References:
JP2001135820A2001-05-18
JP2008306047A2008-12-18
JP2001135820A2001-05-18
Attorney, Agent or Firm:
矢作 和行
野々部 泰平
久保 貴則