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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014093488
Kind Code:
A
Abstract:

To provide a semiconductor device that allows avoiding an increase in chip size while enabling analysis using a TEG even after product shipment.

A semiconductor device 1 includes an active region A1 having a semiconductor layer including, for example, a base diffusion layer 13 and an emitter diffusion layer 14. TEGs 21, which are structures for evaluation including constituent elements of the active region A1, are provided at outside corner portions of a primary surface of the active region A1.


Inventors:
Furuta, Kenichi
Application Number:
JP2012000244746
Publication Date:
May 19, 2014
Filing Date:
November 06, 2012
Export Citation:
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Assignee:
LAPIS SEMICONDUCTOR CO LTD
International Classes:
H01L21/66
Domestic Patent References:
JPS6365636A1988-03-24
JPS61278161A1986-12-09
JPS63299358A1988-12-06
JPH09172049A1997-06-30
Attorney, Agent or Firm:
中島 淳
加藤 和詳
福田 浩志