Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014220516
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising an element having a soft recovery characteristic in a manufacturing method including a step of grinding a rear face of a semiconductor substrate.SOLUTION: After a P-anode layer 2 and an anode electrode 3 are formed on one principal surface of an N-type semiconductor substrate 1, the one principal surface is irradiated with an electron beam to introduce crystal defects in the semiconductor substrate 1. The other principal surface of the semiconductor substrate 1 is ground and thinned, and ion implantation of phosphor is performed to the semiconductor substrate 1 from a surface exposed by the grinding. The implanted surface is irradiated with a YAG laser by a double pulse method to activate the phosphor implanted in the semiconductor substrate 1 electrically, and the crystal defects in a region from the irradiation surface of laser light to a depth corresponding to 5 to 30% of a thickness of the whole thinned wafer are recovered, thus soft recovery is achieved.
Inventors:
NEMOTO MICHIO
KIRISAWA MITSUAKI
NAKAZAWA HARUO
KIRISAWA MITSUAKI
NAKAZAWA HARUO
Application Number:
JP2014144585A
Publication Date:
November 20, 2014
Filing Date:
July 14, 2014
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/861; H01L21/265; H01L21/268; H01L21/322; H01L21/329; H01L21/336; H01L29/739; H01L29/78; H01L29/868
Domestic Patent References:
| JP2002319676A | 2002-10-31 | |||
| JP2005223301A | 2005-08-18 | |||
| JP2005064429A | 2005-03-10 | |||
| JPH07226405A | 1995-08-22 |
Attorney, Agent or Firm:
Akinori Sakai
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