Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015005570
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables assuring of insulation property when used at a high voltage and enables decreasing of heat resistance.SOLUTION: In a semiconductor device, which has a structure in which a first heat diffusion layer 6 is sandwiched between insulating layers 5, 7, or first and second layers, the two layers, or the insulating layers 5, 7 assure electrical insulation property when used at a high voltage, and further, the first heat diffusion layer 6 promotes heat diffusion in the direction along surfaces of the layers 5-6 for reducing heat resistance.
More Like This:
| JP2010068556 | POWER SUPPLY UNIT |
Inventors:
HAYASHI TOSHIHIKO
ITSUMI TETSURO
IZUMI TORU
ASANO KATSUNORI
ITSUMI TETSURO
IZUMI TORU
ASANO KATSUNORI
Application Number:
JP2013128774A
Publication Date:
January 08, 2015
Filing Date:
June 19, 2013
Export Citation:
Assignee:
KANSAI ELECTRIC POWER CO
International Classes:
H01L23/36; H01L23/12; H01L23/13
Attorney, Agent or Firm:
Yamasaki 宏
Mitsuo Tanaka
Mitsuo Tanaka
Previous Patent: SELF-PROPELLED PHOTOVOLTAIC POWER GENERATION APPARATUS AND METHOD
Next Patent: SEMICONDUCTOR DEVICE
Next Patent: SEMICONDUCTOR DEVICE