Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015138863
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which performs writing in a novel method.SOLUTION: A semiconductor device comprises a magnetization free layer MFR having a magnetic wall MW1 on a magnetization fixed layer MFX1 side in a state where a current does not pass through the magnetization free layer MFR. By applying a current to the magnetization free layer MFR from the side where the magnetic wall MW1 is formed, a magnetic wall MW2 moves to the side of the magnetic wall MW1. Accordingly electrical resistance Rbetween a reference layer REF and a magnetization free layer MFR is changed from a lower state to a higher state.
Inventors:
TANIGAWA HIRONOBU
SUZUKI AKIHIRO
SUEMITSU KATSUMI
KITAMURA TAKUYA
KARIYADA HIDETSUGU
SUZUKI AKIHIRO
SUEMITSU KATSUMI
KITAMURA TAKUYA
KARIYADA HIDETSUGU
Application Number:
JP2014009209A
Publication Date:
July 30, 2015
Filing Date:
January 22, 2014
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/8246; H01L27/105; H01L29/82; H01L43/08
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi
Satoshi Amagi