Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016036052
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state imaging element that includes a transistor having stable electric characteristics (e.g., an extremely reduced off current).SOLUTION: By overlaying two different element layers (an element layer including an oxide semiconductor layer, and an element layer including a photodiode) on a semiconductor substrate provided with a drive circuit such as an amplifier circuit, an occupied area of the photodiode is secured. In addition, by using a transistor that uses an oxide semiconductor layer as a channel formation region, as a transistor electrically connected with the photodiode, power consumption of a semiconductor device can be reduced.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2015234797A
Publication Date:
March 17, 2016
Filing Date:
December 01, 2015
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; H01L21/336; H01L27/146
Domestic Patent References:
| JP2011142314A | 2011-07-21 | |||
| JP2010141230A | 2010-06-24 | |||
| JP2012028731A | 2012-02-09 |
Foreign References:
| US20110140099A1 | 2011-06-16 | |||
| US20100148171A1 | 2010-06-17 | |||
| US20110309353A1 | 2011-12-22 |