Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016042533
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a withstanding voltage and of reducing a loss.SOLUTION: A semiconductor device according to an embodiment comprises: a second semiconductor layer of a second conductivity type selectively provided on a first semiconductor layer of a first conductivity type; a third semiconductor layer of the first conductivity type provided on the second semiconductor layer; and at least one control electrode opposed to the second semiconductor layer and the third semiconductor layer via an insulating film. The semiconductor device further comprises: a fourth semiconductor layer of the second conductivity type provided at an opposite side to the second semiconductor layer, of the control electrode; and a semiconductor region provided between the first semiconductor layer contacted with a bottom part of the control electrode via the insulating film, and the fourth semiconductor layer, and that contains at least one kind of electrically inactive element in at least one of the first semiconductor layer and the fourth semiconductor layer.SELECTED DRAWING: Figure 1
Inventors:
NISHIKAWA YUKIE
AKAIKE YASUHIKO
AKAIKE YASUHIKO
Application Number:
JP2014165984A
Publication Date:
March 31, 2016
Filing Date:
August 18, 2014
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/78; H01L21/336; H01L29/739
Attorney, Agent or Firm:
Masahiko Hinataji