Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016054586
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To resolve a problem that a boosting capability, such as a boosting rate and a boosted voltage, of a charge pump circuit cannot be improved sufficiently, in a conventional semiconductor device.SOLUTION: According to one embodiment, a semiconductor device comprises: a main transistor 40 that has a charge pump circuit having a plurality of booster units connected in series from an input terminal toward an output terminal, the plurality of booster units being diode-connected respectively to flow a forward current in a direction from an inner input terminal Ta toward an inner output terminal Tc; a sub transistor 41 connected between a first terminal of the main transistor 40 and a back gate terminal of the main transistor 40, and whose control terminal is connected with a second terminal of the main transistor 40; a resistor 42 that connects between the second terminal of a main transistor 50 and the back gate terminal of the main transistor 40; and a capacitor connected between the inner output terminal Tc and clock wiring.SELECTED DRAWING: Figure 4
Inventors:
IKENAGA YOSHIFUMI
Application Number:
JP2014178835A
Publication Date:
April 14, 2016
Filing Date:
September 03, 2014
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H02M3/07
Domestic Patent References:
| JP2006191781A | 2006-07-20 | |||
| JP2011109836A | 2011-06-02 | |||
| JP2011205797A | 2011-10-13 | |||
| JP2011211767A | 2011-10-20 | |||
| JPH08149802A | 1996-06-07 |
Foreign References:
| US20040183114A1 | 2004-09-23 |
Attorney, Agent or Firm:
Ken Ieiri