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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016167616
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To suppress the variation in luminance caused by the fluctuation in value of current flowing in a light-emitting element depending on the change of the environmental temperature.SOLUTION: A first transistor 101, a second transistor 102, and a light-emitting element 103 are disposed in a pixel 100. Through the first transistor 101, a gate terminal of the second transistor 102 is connected to a signal line 104 to which an image signal is input. A gate terminal of the first transistor 101 is connected to a gate line 105. The second transistor 102 and the light-emitting element 103 are connected to each other between a power source line 106 and a power source line 107 connected to a cathode of the light-emitting element 103. When the potential Vel of the power source line 106 and the potential Vmoni of the power source line 107 satisfy Vel>Vmoni, current flows from the power source line 106 to the power source line 107. The light-emitting element 103 emits light in accordance with the amount of current flowing in the light-emitting element 103.SELECTED DRAWING: Figure 1

Inventors:
KOYAMA JUN
Application Number:
JP2016085674A
Publication Date:
September 15, 2016
Filing Date:
April 22, 2016
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/28; H01L29/417; H01L29/423; H01L29/49; H01L51/50
Domestic Patent References:
JP2010171404A2010-08-05
JP2010186994A2010-08-26
JP2010140919A2010-06-24
JP2009135380A2009-06-18
JP2010062229A2010-03-18
JP2009167087A2009-07-30
JP2007220820A2007-08-30
Foreign References:
US20100051935A12010-03-04