Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017059796
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To improve a performance of a semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor substrate 1; an element isolation film STM formed on a top face 1a of the semiconductor substrate; a fin FA which is a part of the semiconductor substrate and has side faces FAs piercing the element isolation film to protrude in a direction perpendicular to the top face to be located opposite to each other in a first direction of the top face and has a principal surface FAa connecting the opposite side faces, and which extends in a second direction orthogonal to the first direction. The semiconductor device further comprises: a control gate electrode CG which is arranged on the side face via a gate insulation film GIt and extends in the first direction; and a memory gate electrode MG which is arranged on the side face via a gate insulation film GIm including a charge storage layer and extends in the first direction. And in the direction orthogonal to the top face, an overlap length OLmg where the memory gate electrode overlaps the side face is smaller than an overlap length OLcg where the control gate overlaps the side face.SELECTED DRAWING: Figure 26
Inventors:
TAKEUCHI YOSUKE
TSUKUDA EIJI
SONODA KENICHIRO
TSUDA KOREFUMI
TSUKUDA EIJI
SONODA KENICHIRO
TSUDA KOREFUMI
Application Number:
JP2015186033A
Publication Date:
March 23, 2017
Filing Date:
September 18, 2015
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/336; H01L27/105; H01L29/788; H01L29/792
Domestic Patent References:
| JP2014017343A | 2014-01-30 | |||
| JP2006066564A | 2006-03-09 | |||
| JP2007184489A | 2007-07-19 |
Attorney, Agent or Firm:
Tsutsui International Patent Office