Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017168611
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To solve such a problem of an IGBT using GaN or SiC that about 3 (eV) light is generated in the IGBT to cause a defect in the gate insulator of the IGBT, and such a problem that charges trapped in a deep level are excited to move to a channel region thus causing variation of the gate threshold voltage from a predetermined value.SOLUTION: A semiconductor device includes a normally-on semiconductor element having a first semiconductor layer capable of conductivity modulation, and a first gate electrode, and not having a gate insulator between the first gate electrode and first semiconductor layer, and a normally-off semiconductor element having a second gate electrode, and a gate insulator between a second semiconductor layer and a second gate electrode. The normally-on semiconductor element and normally-off semiconductor element are connected in series.SELECTED DRAWING: Figure 1
Inventors:
UENO KATSUNORI
Application Number:
JP2016052045A
Publication Date:
September 21, 2017
Filing Date:
March 16, 2016
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L25/07; H01L21/337; H01L21/338; H01L21/8234; H01L25/18; H01L27/06; H01L27/088; H01L29/12; H01L29/739; H01L29/74; H01L29/78; H01L29/808; H01L29/812; H02M1/00
Attorney, Agent or Firm:
Longhua International Patent Service Corporation