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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018066722
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device of island-less structure, in which cracking of an element is suppressed.SOLUTION: A sensor 100 of the present invention comprises an element 10, a plurality of lead terminals 21-24, a plurality of conductors 31, 32 and an encapsulation unit 50. The element 10 has a magnetoelectric conversion function or a photoelectric conversion function and includes a substrate 11, an active layer 12 formed on the substrate 11 and a plurality of electrodes 13a-13d electrically connected to the active layer 12. The plurality of lead terminals 21-24 are arranged around the hall element 10 in a plan view. The conductors 31, 32 electrically connect the plurality of electrodes 13a-13d of the hall element 10 and the plurality of lead terminals 21-24, respectively. The encapsulation unit 50 contains a synthetic resin and covers a face 10a on the active layer 12 side of the hall element 10, a side face 10b of the hall element 10, an outer edge 111a on the reverse side that is opposite the active layer 12 of the hall element 10, and the plurality of conductors 31, 32.SELECTED DRAWING: Figure 1

Inventors:
ISHIDA TAKUYA
Application Number:
JP2017149239A
Publication Date:
April 26, 2018
Filing Date:
August 01, 2017
Export Citation:
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Assignee:
ASAHI KASEI DENSHI KK
International Classes:
G01R33/02; G01R33/07; H01L23/50; H01L31/02; H01L33/54; H01L33/62; H01L43/04
Domestic Patent References:
JP2015090350A2015-05-11
JP2005123383A2005-05-12
JP2014225643A2014-12-04
JPH04217375A1992-08-07
JP2016021549A2016-02-04
Foreign References:
WO2006095834A12006-09-14
WO2014091714A12014-06-19
Attorney, Agent or Firm:
Tetsuya Mori
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