Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018074167
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a high-speed and low-power-consumption semiconductor device.SOLUTION: A semiconductor device has: a storage element using transistors 102n, 102p each having crystalline silicon in a channel formation region; a capacitive element 136 for storing data of the storage element; and a transistor 121 serving as a switching element for controlling supply, retention and discharge of charge in the capacitive element 136. The transistor 121 is located on an insulation film 120 which covers the transistors 102n, 102p. The insulation film 120 has: a first oxide insulation film 120a where oxygen is partially desorbed due to heat application; and a second oxide insulation film 120b provided around the first oxide insulation film, for preventing diffusion of oxygen. An oxide semiconductor film 122 of the transistor 121 has: a first region 127 which contacts the first oxide insulation film 120 and serves as a channel formation region; and a pair of second regions 128, 129 which sandwich the first region and contacts the first and second oxide insulation films.SELECTED DRAWING: Figure 1
Inventors:
IEDA YOSHINORI
ISOBE ATSUO
SHIONOIRI YUTAKA
ATAMI TOMOAKI
ISOBE ATSUO
SHIONOIRI YUTAKA
ATAMI TOMOAKI
Application Number:
JP2017225278A
Publication Date:
May 10, 2018
Filing Date:
November 23, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L21/8242; H01L27/108; H01L27/1156; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP2007318112A | 2007-12-06 | |||
| JP2009260004A | 2009-11-05 | |||
| JP2006310799A | 2006-11-09 | |||
| JP2009135350A | 2009-06-18 | |||
| JP2009283793A | 2009-12-03 |
Foreign References:
| US20040130006A1 | 2004-07-08 |
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