Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018098476
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit an increase in unintended current in a structure where a bidirectional Zener diode is formed in a trench.SOLUTION: A semiconductor device 1 includes an n-type semiconductor layer 2 having a principal surface where a diode trench 46 is formed. The diode trench 46 includes an inner wall insulation film 47 on an inner wall. The inner wall insulation film 47 includes a sidewall insulation film 48 and a bottom wall insulation film 49 having a thickness larger than a thickness of the sidewall insulation film 48. The semiconductor device 1 includes a bidirectional Zener diode D formed in the diode trench 46 and on the bottom wall insulation film 49. The bidirectional Zener diode D has a pair of ntype parts 52 and at least one p type part 53 formed between the pair of ntype parts 52.SELECTED DRAWING: Figure 5
Inventors:
NISHIDA KENJI
ONISHI SHIMPEI
NASU KENTARO
ONISHI SHIMPEI
NASU KENTARO
Application Number:
JP2017022146A
Publication Date:
June 21, 2018
Filing Date:
February 09, 2017
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L21/329; H01L21/822; H01L27/04; H01L29/06; H01L29/12; H01L29/41; H01L29/78; H01L29/861; H01L29/866; H01L29/868
Domestic Patent References:
| JP2008085278A | 2008-04-10 | |||
| JP2002026325A | 2002-01-25 | |||
| JP2008536316A | 2008-09-04 | |||
| JPH11251443A | 1999-09-17 |
Foreign References:
| US20130075810A1 | 2013-03-28 |
Attorney, Agent or Firm:
Patent Business Corporation Ai Patent Office