Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019175473
Kind Code:
A
Abstract:
To solve the problem that a circuit including an antenna or a thin film transistor is damaged as the electric charge accumulated in an insulator causes discharge (the problem of electrostatic discharge).SOLUTION: A semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna. A first conductive film is provided between the first insulator and the circuit, and a second conductive film is provided between the second insulator and the antenna.SELECTED DRAWING: Figure 1
Inventors:
OIKAWA YOSHIAKI
EGUCHI SHINGO
EGUCHI SHINGO
Application Number:
JP2019087001A
Publication Date:
October 10, 2019
Filing Date:
April 29, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G06K19/077; G06K19/02; H01L21/3205; H01L21/336; H01L21/768; H01L21/822; H01L21/8234; H01L23/29; H01L23/31; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H01Q1/40