Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020004474
Kind Code:
A
Abstract:
To provide a semiconductor device capable of reading as correct data even when the read voltage is affected by ambient temperature or the like.SOLUTION: In a semiconductor device, a reference voltage Vref, which is a reference, is applied to a gate of a transistor 51 in a second circuit (ADC) in which a threshold voltage fluctuates in response to a temperature change, and a corrected reference voltage Vref+Vth to which the variation of a threshold voltage Vth is added is generated. By reading an analog voltage as a digital signal using the corrected reference voltage to which the variation of the threshold voltage of the transistor in the second circuit is added, correct data can be read by offsetting a deviation of the characteristic of the temperature change of a transistor 11 in a first circuit (memory cell MC) with the deviation of the characteristic of the temperature change of the transistor in the second circuit.SELECTED DRAWING: Figure 1
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Inventors:
MATSUZAKI TAKANORI
KATO KIYOSHI
KATO KIYOSHI
Application Number:
JP2019136058A
Publication Date:
January 09, 2020
Filing Date:
July 24, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G11C11/4091; G11C11/405; G11C11/56; H01L21/8239; H01L21/8242; H01L27/10; H01L27/105; H01L27/108; H01L27/1156; H01L29/786
Domestic Patent References:
| JP2011119713A | 2011-06-16 | |||
| JP2011129900A | 2011-06-30 | |||
| JP2014199707A | 2014-10-23 | |||
| JP2014199708A | 2014-10-23 | |||
| JP2014194837A | 2014-10-09 |
Foreign References:
| US20110110145A1 | 2011-05-12 | |||
| US20110122670A1 | 2011-05-26 | |||
| US20140269099A1 | 2014-09-18 | |||
| US20140269063A1 | 2014-09-18 | |||
| US20140241054A1 | 2014-08-28 |