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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020150193
Kind Code:
A
Abstract:
To provide a semiconductor device having superior switching characteristics.SOLUTION: A semiconductor device 100 of an embodiment comprises: a first nitride semiconductor layer 3 (channel layer); a second nitride semiconductor layer 4 (barrier layer) placed on the first nitride semiconductor layer 3 and having a larger bandgap than that of the first nitride semiconductor layer 3; a first electrode 5 (source electrode) placed on the second nitride semiconductor layer 4 and electrically connected to the first nitride semiconductor layer 3; a second electrode 7 (drain electrode) placed on the first nitride semiconductor layer 3 and electrically connected to the first nitride semiconductor layer 3; a gate electrode 6 placed between the first electrode 5 and the second electrode 7; a first field plate electrode 8 placed on the second nitride semiconductor layer and having the same height as that of the gate electrode 6; and a second field plate electrode 9 placed between the first field plate electrode 8 and the second electrode 7.SELECTED DRAWING: Figure 1

Inventors:
HUNG HUNG
ISOBE YASUHIRO
YOSHIOKA AKIRA
SUGIYAMA TORU
IWAI MASAAKI
HOSOKAWA TADANORI
ONOMURA MASAAKI
Application Number:
JP2019048043A
Publication Date:
September 17, 2020
Filing Date:
March 15, 2019
Export Citation:
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Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
International Classes:
H01L21/338; H01L21/336; H01L21/337; H01L29/06; H01L29/41; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
JP2011210752A2011-10-20
JP2008277604A2008-11-13
JP2012178416A2012-09-13
JP2017123432A2017-07-13
JP2015170821A2015-09-28
JP2017208379A2017-11-24
JPH07307349A1995-11-21
JP2012028423A2012-02-09
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Masahiro Takashita



 
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