Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021022748
Kind Code:
A
Abstract:
To provide a semiconductor device including a circuit with a reduced area, and a semiconductor device including a circuit capable of reducing variation in a power supply voltage.SOLUTION: A semiconductor device 501 comprises a first transistor 491, a second transistor 490, a first power supply wire 480, and a second power supply wire 482. The first transistor and the second transistor are laminated, and the second power supply wire and the first power supply wire are also laminated. The second power supply wire and the first power supply wire at least partially overlap with each other. The second power supply wire and the first power supply wire are almost parallel with each other. A source electrode (region 476a) of the first transistor is electrically connected to the first power supply wire. A source electrode (region 416a) of the second transistor is electrically connected to the second power supply wire. The second transistor is an n-channel type, and a channel formation region is formed of an oxide semiconductor. The first transistor is a p-channel type, and the channel formation region is formed of silicon.SELECTED DRAWING: Figure 2
Inventors:
KATO KIYOSHI
Application Number:
JP2020180830A
Publication Date:
February 18, 2021
Filing Date:
October 28, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/8238; H01L21/28; H01L21/3205; H01L21/336; H01L21/768; H01L21/8234; H01L21/8239; H01L21/8242; H01L21/8244; H01L23/522; H01L27/06; H01L27/088; H01L27/092; H01L27/105; H01L27/108; H01L27/11; H01L27/1156; H01L29/417; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP2013243349A | 2013-12-05 | |||
| JP2008300765A | 2008-12-11 |
Foreign References:
| WO2012176422A1 | 2012-12-27 | |||
| US20130260505A1 | 2013-10-03 |