Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021153130
Kind Code:
A
Abstract:
To provide a semiconductor device including a thyristor capable of improving the current capability in a reverse direction.SOLUTION: A semiconductor device 1 includes an n-type well region formed in a surface layer part of a p-type semiconductor layer, an n-type base region formed in a surface layer part of the n-type well region and having higher n-type impurity concentration than the n-type well region, a p-type emitter region formed apart from the n-type base region in the surface layer part of the n-type well region, an n-type emitter region formed apart from the n-type well region in the surface layer part of the p-type semiconductor layer, and a p-type base region formed surrounding the n-type well region in the surface layer part of the p-type semiconductor layer in a plan view and having higher p-type impurity concentration than the p-type semiconductor layer. The n-type base region and the p-type emitter region are electrically connected to a first terminal. The n-type emitter region and the p-type base region are electrically connected to a second terminal.SELECTED DRAWING: Figure 2
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Inventors:
SADAKATA KENTARO
Application Number:
JP2020053179A
Publication Date:
September 30, 2021
Filing Date:
March 24, 2020
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L21/822; H01L29/74; H01L21/8222; H01L27/04; H01L27/06; H01L29/747
Attorney, Agent or Firm:
Patent Business Corporation Ai Patent Office