Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022043102
Kind Code:
A
Abstract:
To provide a semiconductor device including a drive circuit, which has a capacitive element with a high numerical aperture and increased charge capacity, and has reduced power consumption.SOLUTION: A semiconductor device comprises: a drive circuit including a first transistor having gate electrodes above and below a semiconductor film so as to overlap the semiconductor film; a pixel having a second transistor including the semiconductor film; a capacitive element with a dielectric film provided between a pair of electrodes provided on the pixel; and a capacitance line electrically connected to one electrode of the pair of electrodes. The gate electrode provided on the semiconductor film of the first transistor is electrically connected to the capacitance line.SELECTED DRAWING: Figure 2
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2021196107A
Publication Date:
March 15, 2022
Filing Date:
December 02, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G02F1/1368; G09F9/30; H01L21/822; H01L21/8234
Domestic Patent References:
| JP2011054951A | 2011-03-17 | |||
| JPH10301100A | 1998-11-13 |