SEMICONDUCTOR DEVICE - TOKYO ELECTRON LTD

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2022046919

Kind Code:

A

Abstract:

To provide a semiconductor device with an interlayer dielectric film having excellent insulating properties.SOLUTION: A semiconductor device has a conductive wiring and an interlayer insulating film in which the conductive wiring is embedded, the interlayer insulating film contains a base material containing silicon oxide and hollow particles dispersed in the base material, and the hollow particles are insulators having a three-dimensional network structure.SELECTED DRAWING: Figure 1

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Inventors:

NI ZEYUAN
KATO DAIKI

Application Number:

JP2020152561A

Publication Date:

March 24, 2022

Filing Date:

September 11, 2020

Export Citation:

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Assignee:

TOKYO ELECTRON LTD

International Classes:

B82Y10/00; H01L21/768; B82Y30/00; H01L21/314; H01L21/316

Attorney, Agent or Firm:

Tadashige Ito
Tadahiko Ito

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