SEMICONDUCTOR DEVICE - Semiconductor Energy Laboratory Co., Ltd.

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2023016820

Kind Code:

A

Abstract:

To provide a semiconductor device with high reliability.SOLUTION: A semiconductor device is provided in which: a second insulating layer is located on a first insulating layer; a semiconductor layer is located between the first insulating layer and the second insulating layer; a third insulating layer is located on the second insulating layer; a fourth insulating layer is located on the third insulating layer; a first conductive layer has a region overlapped with the semiconductor layer and is located between the third insulating layer and the fourth insulating layer; the third insulating layer has a region in contact with a lower surface of the first conductive layer and a region in contact with the fourth insulating layer; the fourth insulating layer is in contact with an upper surface and a lateral surface of the first conductive layer; a fifth insulating layer is in contact with an upper surface and a lateral surface of the semiconductor layer; the fifth insulating layer has a first opening and a second opening in a region overlapped with the semiconductor layer and not overlapped with the first conductive layer; a second conductive layer and a third conductive layer are electrically connected to the semiconductor layer at the first opening and the second opening, respectively; each of the third to fifth insulating layers includes a metal, and oxygen or nitrogen; a sixth insulating layer has a region in contact with an upper surface and a lateral face of the fifth insulating layer and a region in contact with the first insulating layer.SELECTED DRAWING: Figure 1

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Inventors:

Masami Kaminaga
Daisuke Kurosaki
Masakatsu Ohno
Junichi Kozuka

Application Number:

JP2022179419A

Publication Date:

February 02, 2023

Filing Date:

November 09, 2022

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

H01L29/786; G02F1/1368; H01L21/336; H05B33/02; H05B33/14; H05B33/22; H10K59/124

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