Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023153225
Kind Code:
A
Abstract:
To provide a semiconductor device that is less prone to the fluctuation in the electrical characteristic due to miniaturization.SOLUTION: A semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions, a gate insulating film provided over the oxide semiconductor film, and a first electrode overlapping the first region on the gate insulating film, and the first region is a CAAC oxide semiconductor region, and the pair of second regions and the pair of third regions are amorphous oxide semiconductor regions containing a dopant, and the dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2023130051A
Publication Date:
October 17, 2023
Filing Date:
August 09, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L21/28; H01L29/417; H01L29/423; H01L29/786; H10B12/00