Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3114006
Kind Code:
B2
Abstract:
PURPOSE: To improve the impact resistance by forming the element structure of a semiconductor device in a columnar state, and forming a diffused resistor for detecting a stress in the same thickness as a cantilever beam.
CONSTITUTION: An electric circuit is, for example, provided at the cantilever beam 501 of a semiconductor acceleration sensor. The beam 501 for detecting a stress, a support 502 for supporting the beam and a weight according to an output value are installed at the end of the beam. A diffused resistor 505, a pad for outputting, wirings or further a temperature compensator, an amplifier are disposed at the side of the beam 501. The acceleration signal detected by the beam 501 is amplified by the amplifier, its output value is output from a terminal 512 added to a package via the wirings 504 on a support base 502. At this time, a drift can be removed according to the temperature by the compensator.
Inventors:
Masataka Shinogi
Yutaka Saito
Kenji Kato
Yutaka Saito
Kenji Kato
Application Number:
JP18378495A
Publication Date:
December 04, 2000
Filing Date:
July 20, 1995
Export Citation:
Assignee:
Seiko Instruments Inc.
International Classes:
B81B3/00; G01L9/00; G01L9/04; G01P15/08; G01L1/18; G01P15/12; G01P15/18; H01L29/84; (IPC1-7): G01P15/12; G01L1/18; G01L9/04; H01L29/84
Domestic Patent References:
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| JP60180174A | ||||
| JP4240567A | ||||
| JP4177171A | ||||
| JP46471A | ||||
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| JP56370U |
Attorney, Agent or Firm:
Keinosuke Hayashi
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