SEMICONDUCTOR DEVICE

Japanese Patent JP3495498

B2

PROBLEM TO BE SOLVED: To reduce the lowering of breakdown strength by field concentration, and to change a semiconductor device into a high breakdown-strength IC by forming the thickness of a gate insulating film in the lower section of a drain electrode wiring at a value thicker than the thickness of a gate insulating film on a region for forming a channel.
SOLUTION: The thickness d2 of a gate insulating film 7' right under a gate electrode 8' in the lower section of a drain electrode wiring 10a is formed at a value thicker than the thickness d1 of a gate insulating film 7' on the p-type region 5 side for forming a channel. Consequently, when high potential is applied to the drain electrode wiring 10a, potential distribution concentrated at the end section of a gate electrode 8" is reduced, and field concentration on the surface of an n-type semiconductor epitaxial layer 2 is relaxed. Accordingly, the lowering of breakdown strength between a drain and a source can be inhibited. Even when the drain electrode wiring 10a is formed through an insulating film 11 extending over a drain electrode 10 from the upper section of another region insulated and isolated by a p+ type element isolation region 3 in the direction that there is no n+ type source region 4, the deterioration of breakdown strength between the drain and the source can be suppressed.

Hero Nagahama
Kazushi Tomii
Yoshiyuki Sugiura

JP5958096A

February 09, 2004

March 15, 1996

Click for automatic bibliography generation  

MATSUSHITA ELECTRIC WORKS,LTD.

H01L29/78; (IPC1-7): H01L29/78

Keisei Nishikawa (1 person outside)

Previous Patent: NICKEL ELECTRODE FOR ALKALINE STORAGE BATTERY

Next Patent: OUTDOOR MACHINE OF AIR CONDITIONER