Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3504085
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain an IGBT with a current sensor in which sufficient overcurrent detection accuracy and speed are ensured while reducing power loss at the time of detecting an overcurrent and a monolithic structure can be formed easily including a gate control circuit and the like.
SOLUTION: A voltage detection terminal layer 41 is arranged in a base layer 32 on the surface of a silicon layer 31 independently from a source layer 33 at an interval wider than that of the source layer 33, for example. Overcurrent is detected prior to saturation of the main currento by monitoring the drain voltage when an MOSFET is turned on by applying a voltage to a gate electrode 35 of trench structure by means of a voltage detection electrode 43 through the voltage detection terminal layer 41.
Inventors:
Mitsuhiko Kitagawa
Application Number:
JP27902696A
Publication Date:
March 08, 2004
Filing Date:
September 30, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/78; H01L27/04; H01L29/739; (IPC1-7): H01L29/78
Domestic Patent References:
| JP786587A | ||||
| JP629539A | ||||
| JP846193A | ||||
| JP4355968A |
Attorney, Agent or Firm:
Takehiko Suzue (4 outside)