Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3810401
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the gate oxide film of a semiconductor device from being destroyed without the need for revising its manufacturing process while suppressing the area of a protection circuit from being increased.
SOLUTION: The semiconductor device includes the protection circuit for preventing electrostatic destruction configured to include an in-put line for electrically interconnecting an input terminal and an input circuit, a first power line connected to a first power terminal, a first MOSFET, and a first protection circuit. The drain electrode of the first MOSFET is connected to the input line, the source electrode and the base electrode are connected to the first power line, and the gate electrode is connected to a voltage control circuit, respectively. The voltage control circuit is connected to the input line and the first power line. The voltage control circuit sets a potential of the gate electrode of the first MOSFET to be a potential between a potential of the drain electrode and a potential of the source electrode to prevent destruction of the gate oxide film due to an electrostatic surge.
Inventors:
Katsuhiro Kato
Application Number:
JP2003349871A
Publication Date:
August 16, 2006
Filing Date:
October 08, 2003
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L21/8238; H01L27/04; H01L21/822; H01L27/02; H01L27/06; H01L27/092; H02H9/00; (IPC1-7): H01L21/8238; H01L21/822; H01L27/04; H01L27/06; H01L27/092
Domestic Patent References:
| JP6104721A | ||||
| JP6334443A | ||||
| JP6310715A | ||||
| JP2003060058A | ||||
| JP2001358297A |
Attorney, Agent or Firm:
Takashi Ogaki
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