Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3858857
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress breakdown of a semiconductor chip due to thermal stress in a semiconductor device where the electrode of the semiconductor chip is bonded to solder.
SOLUTION: An Al electrode 19 formed on a semiconductor substrate 15 through an interlayer insulating film 17 is connected electrically with a P type layer 13 and an N+ type layer 14 through a contact hole 18 formed in the interlayer insulating film 17 and an Ni plating layer 20 is formed on the Al electrode 19. In the semiconductor device having a constitution where the Ni plating layer 20 of the semiconductor chip is bonded to solder 6b, a void 25 is provided in the Al electrode 19 at a position on th upper side of the contact hole 18.
Inventors:
Kimie Ayukawa
Shoji Miura
Chikage Noritake
Keiji Mayama
Shoji Miura
Chikage Noritake
Keiji Mayama
Application Number:
JP2003184755A
Publication Date:
December 20, 2006
Filing Date:
June 27, 2003
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L23/36; H01L23/52; H01L21/3205; (IPC1-7): H01L23/36; H01L21/3205
Domestic Patent References:
| JP56083956A | ||||
| JP63141330A | ||||
| JP4018441U | ||||
| JP7094549A | ||||
| JP11121457A | ||||
| JP2003110064A |
Attorney, Agent or Firm:
Yoji Ito
Takahiro Miura
Fumihiro Mizuno
Takahiro Miura
Fumihiro Mizuno