Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3916874
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent a high electric field from being applied to the gate insulating film between a buried gate contact region and a MOS gate electrode, in a field-effect transistor which has a buried contact region.
SOLUTION: The gate insulating film is made thicker in the vicinity of the buried gate contact region, and the MOS gate electrode and the buried contact region are separated from each other.
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Inventors:
Asano Katsunori
Yoshitaka Sugawara
High Daisuke Yama
Yoshitaka Sugawara
High Daisuke Yama
Application Number:
JP2001029573A
Publication Date:
May 23, 2007
Filing Date:
February 06, 2001
Export Citation:
Assignee:
Kansai Electric Power Co., Inc.
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739; H01L29/80; (IPC1-7): H01L29/78; H01L21/336
Domestic Patent References:
| JP2000031483A | ||||
| JP2000200791A | ||||
| JP2000252475A |
Foreign References:
| WO2000022679A1 |
Attorney, Agent or Firm:
Hiroshi Yamazaki
Atsushi Maeda
Ryuji Higashijima
Atsushi Maeda
Ryuji Higashijima
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