Title:
半導体装置
Document Type and Number:
Japanese Patent JP4868742
Kind Code:
B2
Abstract:
A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.
Inventors:
Yoshihiro Nakata
Katsumi Suzuki
Iwao Sugiura
Ei Yano
Katsumi Suzuki
Iwao Sugiura
Ei Yano
Application Number:
JP2004572103A
Publication Date:
February 01, 2012
Filing Date:
May 21, 2003
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/316; H01L21/768; H01L23/532
Domestic Patent References:
| JP2002305193A | ||||
| JP2002524849A |
Attorney, Agent or Firm:
Tadahiko Ito
Akinori Yamaguchi
Akinori Yamaguchi