Title:
半導体装置
Document Type and Number:
Japanese Patent JP5040765
Kind Code:
B2
Abstract:
To provide a semiconductor device which can perform its thermoelectric conversion in an effective manner.
The semiconductor device has a semiconductor chip 10, in whose principal surface a heat generating source 11 is formed, a module substrate 16, whereon the semiconductor chip 10 is mounted flip-chip-wise via signal bumps 13; a Seebeck element 15, having a high-temperature-side terminal 15a connected with the vicinity of the maximum-temperature-region of the principal surface of the semiconductor chip 10 and having a low-temperature-side terminal 15b; and a heat radiating portion 19 connected with the low-temperature-side terminal 15b.
COPYRIGHT: (C)2010,JPO&INPIT
Inventors:
Naotaka Kuroda
Application Number:
JP2008078167A
Publication Date:
October 03, 2012
Filing Date:
March 25, 2008
Export Citation:
Assignee:
NEC
International Classes:
H01L23/38; H01L35/30; H01L35/32
Domestic Patent References:
| JP2004228485A | ||||
| JP2002198476A | ||||
| JP61082450A | ||||
| JP1110442U | ||||
| JP1258449A | ||||
| JP2002190687A | ||||
| JP2005276950A |
Attorney, Agent or Firm:
Ken Ieiri