Title:
半導体装置
Document Type and Number:
Japanese Patent JP5388632
Kind Code:
B2
Abstract:
An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.
Inventors:
Jun Koyama
Yoshifumi Tanada
Hideshi Shishido
Yoshifumi Tanada
Hideshi Shishido
Application Number:
JP2009050844A
Publication Date:
January 15, 2014
Filing Date:
March 04, 2009
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/822; H01L27/04; H01L27/06; H01L27/08; H01L29/786; H02H1/04; H02H11/00
Domestic Patent References:
| JP2002313949A | ||||
| JP2003303890A | ||||
| JP2005093496A | ||||
| JP7321628A | ||||
| JP2005129909A | ||||
| JP20075774A | ||||
| JP2006108307A | ||||
| JP1289381A |
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