半導体装置 - 株式会社東芝

Title:

半導体装置

Document Type and Number:

Japanese Patent JP5622769

Kind Code:

B2

Abstract:

According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.

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Inventors:

西義史
丸亀孝生
石川貴之
小山正人

Application Number:

JP2012052186A

Publication Date:

November 12, 2014

Filing Date:

March 08, 2012

Export Citation:

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Assignee:

株式会社東芝

International Classes:

H01L49/00; H01L27/10; H01L27/105; H01L45/00

Attorney, Agent or Firm:

Hiroaki Sakai
Hideki Miyata

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