Title:
半導体装置
Document Type and Number:
Japanese Patent JP5624351
Kind Code:
B2
Abstract:
An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.
Inventors:
山崎 舜平
郷戸 宏充
岸田 英幸
郷戸 宏充
岸田 英幸
Application Number:
JP2010092187A
Publication Date:
November 12, 2014
Filing Date:
April 13, 2010
Export Citation:
Assignee:
株式会社半導体エネルギー研究所
International Classes:
H01L29/786; H05B44/00