Title:
半導体装置
Document Type and Number:
Japanese Patent JP5859133
Kind Code:
B2
Abstract:
[Problem] The purpose of the present invention is to provide a semiconductor device enabling an unprecedented reduction in the impact of thermal stress, in particular on a MEMS sensor. [Solution] The present invention is characterized by comprising: a MEMS sensor (3) composed principally of silicon layered onto a printed substrate (2) (support substrate) with a first die-bonding resin (5) interposed therebetween; a first silicon substrate (11) (magnetic sensor ASIC) layered onto the MEMS sensor (3) with a second die-bonding resin (9) interposed therebetween; and a molded resin (20) serving as a sealant; the die-bonding resins (5, 9) being formed of materials softer than the molded resin (20).
Inventors:
Katsuya Kikuiri
Naobu Okawa
Naobu Okawa
Application Number:
JP2014535505A
Publication Date:
February 10, 2016
Filing Date:
September 04, 2013
Export Citation:
Assignee:
ALPS ELECTRIC CO.,LTD.
International Classes:
G01P15/08; B81B7/02; G01P1/02; G01P15/125; G01P15/18; G01R33/02
Domestic Patent References:
| JP2000214177A | 2000-08-04 | |||
| JP2009063550A | 2009-03-26 | |||
| JP2010073765A | 2010-04-02 | |||
| JP2004132792A | 2004-04-30 | |||
| JP2009164564A | 2009-07-23 | |||
| JP2013216804A | 2013-10-24 |
Foreign References:
| WO2012124282A1 | 2012-09-20 | |||
| WO2007020701A1 | 2007-02-22 |
Attorney, Agent or Firm:
野▲崎▼ 照夫
Iwao Hirayama
Masahiro Matsushita
Katsuyuki Okubo
Iwao Hirayama
Masahiro Matsushita
Katsuyuki Okubo