Title:
半導体装置
Document Type and Number:
Japanese Patent JP5884694
Kind Code:
B2
Abstract:
The device has a common power supply wire (Wb) attached between a drain (D) of a power MOSFET (10) and a direct current battery (2) for transferring drive power from the battery to the MOSFET and a control-integrated circuit (IC) (11) via the drain, a power supply terminal (D2), and a IC control terminal. A terminal commutation protection diode (102) is integrally formed in the MOSFET such that the diode is attached between the drain and the supply terminal for limiting a flow of current from the control terminal to the supply terminal.
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Inventors:
Hirohisa Yamaguchi
Application Number:
JP2012206490A
Publication Date:
March 15, 2016
Filing Date:
September 20, 2012
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H02H11/00; F02P19/02
Domestic Patent References:
| JP2004108189A | ||||
| JP1104050U | ||||
| JP2010216420A | ||||
| JP2009515089A | ||||
| JP2012172568A |
Attorney, Agent or Firm:
Patent Business Corporation Aichi International Patent Office