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Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6041795
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a molded semiconductor device which corresponds to a high temperature and has high reliability.SOLUTION: A semiconductor device comprises: a semiconductor element 5 which has an electrode formed on a principal surface 5a and a rear face bonded to a circuit surface 6f of a heat spreader 6; a lead frame 3 bonded to the electrode; a coating body 2 which covers the circuit surface 6f so as to surround the semiconductor element 5; and an encapsulation body 1 for encapsulating and wrapping a part of the lead frame, which is bonded to the electrode on the principal surface 5a and the semiconductor element 5 and the coating body 2. The coating body 2 is formed by a material having an elastic modulus lower than that of the encapsulation body 1 and formed at a distance from the semiconductor element 5 in an extension direction of the circuit surface 6f and formed to have a height equal to or higher than a height of the principal surface 5a of the semiconductor element in a height direction from the circuit surface 6f so as not to reach a surface 1f of the encapsulation body 1.

Inventors:
Six-hundred Hoho
Kei Yamamoto
Application Number:
JP2013254682A
Publication Date:
December 14, 2016
Filing Date:
December 10, 2013
Export Citation:
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Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L23/50; H01L23/29; H01L23/31; H01L23/34; H01L23/48; H01L25/07; H01L25/18
Domestic Patent References:
JP200276197A
JP2010199516A
JP200091472A
JP2006351737A
JP2009252838A
Attorney, Agent or Firm:
Masuo Oiwa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa