Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6119165
Kind Code:
B2
Abstract:
A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer.
Inventors:
Junji Kotani
Tetsuro Ishiguro
Atsushi Yamada
Tetsuichi Nakamura
Tetsuro Ishiguro
Atsushi Yamada
Tetsuichi Nakamura
Application Number:
JP2012218250A
Publication Date:
April 26, 2017
Filing Date:
September 28, 2012
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L21/20; H01L29/778; H01L29/812
Domestic Patent References:
| JP2010182872A | ||||
| JP2012033575A | ||||
| JP2012033646A | ||||
| JP2014017422A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Akinori Yamaguchi
Tadahiko Ito
Akinori Yamaguchi
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