Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6126166
Kind Code:
B2
Abstract:
An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing oxygen, preferably, a gate insulating film including a region containing oxygen with a higher proportion than the stoichiometric composition is used. Thus, oxygen is supplied from the gate insulating film to the oxide semiconductor film. Further, a metal oxide film is used as part of the gate insulating film, whereby reincorporation of an impurity such as hydrogen or water into the oxide semiconductor is suppressed.
Inventors:
Shunpei Yamazaki
Application Number:
JP2015129533A
Publication Date:
May 10, 2017
Filing Date:
June 29, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G09F9/30
Domestic Patent References:
| JP2010123939A | ||||
| JP2010056541A | ||||
| JP2010062548A | ||||
| JP2007258223A | ||||
| JP2008535205A |
Foreign References:
| WO2010024279A1 | ||||
| WO2009093625A1 |