Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6128906
Kind Code:
B2
Abstract:
Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm3 and lower than or equal to 2.63 g/cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins/cm3 or less in electron spin resonance.
Inventors:
Kenichi Okazaki
Toshiyuki Miyamoto
Masashi Nomura
Takashi Hamochi
Toshiyuki Miyamoto
Masashi Nomura
Takashi Hamochi
Application Number:
JP2013051819A
Publication Date:
May 17, 2017
Filing Date:
March 14, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/28; H01L21/283; H01L21/336; H01L21/8234; H01L21/8242; H01L27/08; H01L27/088; H01L27/108; H01L29/423; H01L29/49
Domestic Patent References:
| JP2009224479A | ||||
| JP2003124117A | ||||
| JP2001007335A | ||||
| JP2008159640A | ||||
| JP2011103370A | ||||
| JP2010087518A |
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