Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6201023
Kind Code:
B2
Abstract:
A memory device includes a memory cell storing data as stored data, an output signal line, and a wiring to which a voltage is applied. The memory cell includes a comparison circuit performing a comparison operation between the stored data and search data and taking a conduction state or a non-conduction state in accordance with the operation result, and a field-effect transistor controlling writing and holding of the stored data. A voltage of the output signal line is equal to the voltage of the wiring when the comparison circuit is in the conduction state.
Inventors:
Daisuke Matsubayashi
Application Number:
JP2016198843A
Publication Date:
September 20, 2017
Filing Date:
October 07, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/28; G11C15/04; H01L21/336; H01L29/788; H01L29/792
Domestic Patent References:
| JP2009135350A | ||||
| JP201154936A |