Semiconductor device

Japanese Patent JP6219140

B2

Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.

JP3221437	INPUT PROTECTION CIRCUIT
JP7073773	Semiconductor device
JP2008193019	SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE

Yoshinori Yoshida
Koichi Kato
Tsuyoshi Kachi
Kagesuke Furuya

JP2013241987A

October 25, 2017

November 22, 2013

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Renesas Electronics Corporation

H01L21/8234; H01L21/3205; H01L21/336; H01L21/768; H01L21/822; H01L23/522; H01L25/07; H01L25/18; H01L27/04; H01L27/088; H01L29/06; H01L29/41; H01L29/417; H01L29/78

JP2002158353A
JP2003031805A
JP2009278028A
JP62150779A
JP2013093579A

Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji

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