Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6226625
Kind Code:
B2
Abstract:
A transistor having a multi-layer structure of oxide semiconductor layers is provided in which a second oxide semiconductor layer having a crystalline structure including indium zinc oxide is formed over a first oxide semiconductor layer having an amorphous structure, and at least a third oxide semiconductor layer is formed stacked over the second oxide semiconductor layer. The second oxide semiconductor layer mainly serves as a carrier path for the transistor. The first oxide semiconductor layer and the third oxide semiconductor layer each serve as a barrier layer for suppressing entrance of impurity states of an insulating layer in contact with the multi-layer structure to the carrier path.
Inventors:
Shunpei Yamazaki
Application Number:
JP2013165071A
Publication Date:
November 08, 2017
Filing Date:
August 08, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; C23C14/08; H01L21/363
Domestic Patent References:
| JP2011135063A | ||||
| JP2011135066A | ||||
| JP2011086923A | ||||
| JP2012134470A | ||||
| JP2011124360A | ||||
| JP2011243745A | ||||
| JP2011138934A | ||||
| JP2010021555A |
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