Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6227039
Kind Code:
B2
Abstract:
It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized.
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Inventors:
Kengo Akimoto
Ryosuke Watanabe
Masashi Tsubuki
Shunpei Yamazaki
Ryosuke Watanabe
Masashi Tsubuki
Shunpei Yamazaki
Application Number:
JP2016065850A
Publication Date:
November 08, 2017
Filing Date:
March 29, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/28; H01L21/8242; H01L27/108
Domestic Patent References:
| JP2007220816A | ||||
| JP2001332735A | ||||
| JP2010021170A | ||||
| JP5326553A | ||||
| JP2007096055A | ||||
| JP2010003822A | ||||
| JP2008040343A |
Foreign References:
| US20040004222 |